Esd

Autore: Steven H. Voldman
Editore: John Wiley & Sons
ISBN: 0470012900
Grandezza: 55,20 MB
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Vista: 6952
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This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Esd

Autore: Steven Voldman
Editore:
ISBN:
Grandezza: 43,67 MB
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Vista: 8044
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A comprehensive and in-depth review of analog circuit layout, schematic architecture, device, power network and ESD design This book will provide a balanced overview of analog circuit design layout, analog circuit schematic development, architecture of chips, and ESD design. It will start at an introductory level and will bring the reader right up to the state-of-the-art. Two critical design aspects for analog and power integrated circuits are combined. The first design aspect covers analog circuit design techniques to achieve the desired circuit performance. The second and main aspect presents the additional challenges associated with the design of adequate and effective ESD protection elements and schemes. A comprehensive list of practical application examples is used to demonstrate the successful combination of both techniques and any potential design trade-offs. Chapter One looks at analog design discipline, including layout and analog matching and analog layout design practices. Chapter Two discusses analog design with circuits, examining: single transistor amplifiers; multi-transistor amplifiers; active loads and more. The third chapter covers analog design layout (also MOSFET layout), before Chapters Four and Five discuss analog design synthesis. The next chapters introduce the reader to analog-digital mixed signal design synthesis, analog signal pin ESD networks, and analog ESD power clamps. Chapter Nine, the last chapter, covers ESD design in analog applications. Clearly describes analog design fundamentals (circuit fundamentals) as well as outlining the various ESD implications Covers a large breadth of subjects and technologies, such as CMOS, LDMOS, BCD, SOI, and thick body SOI Establishes an "ESD analog design" discipline that distinguishes itself from the alternative ESD digital design focus Focuses on circuit and circuit design applications Assessible, with the artwork and tutorial style of the ESD book series PowerPoint slides are available for university faculty members Even in the world of digital circuits, analog and power circuits are two very important but under-addressed topics, especially from the ESD aspect. Dr. Voldman's new book will serve as an essential and practical guide to the greater IC community. With high practical and academic values this book is a "bible" for professionals, graduate students, device and circuit designers for investigating the physics of ESD and for product designs and testing.

Esd Protection Device And Circuit Design For Advanced Cmos Technologies

Autore: Oleg Semenov
Editore: Springer Science & Business Media
ISBN: 9781402083013
Grandezza: 27,82 MB
Formato: PDF, Kindle
Vista: 8574
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ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

Latchup

Autore: Steven H. Voldman
Editore: John Wiley & Sons
ISBN: 9780470516164
Grandezza: 58,44 MB
Formato: PDF, ePub, Docs
Vista: 3772
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Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Esd Design For Analog Circuits

Autore: Vladislav A. Vashchenko
Editore: Springer Science & Business Media
ISBN: 9781441965653
Grandezza: 21,41 MB
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Vista: 2737
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This Book and Simulation Software Bundle Project Dear Reader, this book project brings to you a unique study tool for ESD protection solutions used in analog-integrated circuit (IC) design. Quick-start learning is combined with in-depth understanding for the whole spectrum of cro- disciplinary knowledge required to excel in the ESD ?eld. The chapters cover technical material from elementary semiconductor structure and device levels up to complex analog circuit design examples and case studies. The book project provides two different options for learning the material. The printed material can be studied as any regular technical textbook. At the same time, another option adds parallel exercise using the trial version of a complementary commercial simulation tool with prepared simulation examples. Combination of the textbook material with numerical simulation experience presents a unique opportunity to gain a level of expertise that is hard to achieve otherwise. The book is bundled with simpli?ed trial version of commercial mixed- TM mode simulation software from Angstrom Design Automation. The DECIMM (Device Circuit Mixed-Mode) simulator tool and complementary to the book s- ulation examples can be downloaded from www.analogesd.com. The simulation examples prepared by the authors support the speci?c examples discussed across the book chapters. A key idea behind this project is to provide an opportunity to not only study the book material but also gain a much deeper understanding of the subject by direct experience through practical simulation examples.

System Level Esd Protection

Autore: Vladislav Vashchenko
Editore: Springer Science & Business Media
ISBN: 3319032216
Grandezza: 58,87 MB
Formato: PDF, ePub
Vista: 4069
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This book addresses key aspects of analog integrated circuits and systems design related to system level electrostatic discharge (ESD) protection. It is an invaluable reference for anyone developing systems-on-chip (SoC) and systems-on-package (SoP), integrated with system-level ESD protection. The book focuses on both the design of semiconductor integrated circuit (IC) components with embedded, on-chip system level protection and IC-system co-design. The readers will be enabled to bring the system level ESD protection solutions to the level of integrated circuits, thereby reducing or completely eliminating the need for additional, discrete components on the printed circuit board (PCB) and meeting system-level ESD requirements. The authors take a systematic approach, based on IC-system ESD protection co-design. A detailed description of the available IC-level ESD testing methods is provided, together with a discussion of the correlation between IC-level and system-level ESD testing methods. The IC-level ESD protection design is demonstrated with representative case studies which are analyzed with various numerical simulations and ESD testing. The overall methodology for IC-system ESD co-design is presented as a step-by-step procedure that involves both ESD testing and numerical simulations.

Esd Basics

Autore: Steven H. Voldman
Editore: John Wiley & Sons
ISBN: 1118443268
Grandezza: 26,64 MB
Formato: PDF, Docs
Vista: 7290
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Electrostatic discharge (ESD) continues to impact semiconductormanufacturing, semiconductor components and systems, astechnologies scale from micro- to nano electronics. This bookintroduces the fundamentals of ESD, electrical overstress (EOS),electromagnetic interference (EMI), electromagnetic compatibility(EMC), and latchup, as well as provides a coherent overview of thesemiconductor manufacturing environment and the final systemassembly. It provides an illuminating look into the integration ofESD protection networks followed by examples in specifictechnologies, circuits, and chips. The text is unique in covering semiconductor chip manufacturingissues, ESD semiconductor chip design, and system problemsconfronted today as well as the future of ESD phenomena andnano-technology. Look inside for extensive coverage on: The fundamentals of electrostatics, triboelectric charging, andhow they relate to present day manufacturing environments ofmicro-electronics to nano-technology Semiconductor manufacturing handling and auditing processing toavoid ESD failures ESD, EOS, EMI, EMC, and latchup semiconductor component andsystem level testing to demonstrate product resilience from humanbody model (HBM), transmission line pulse (TLP), charged devicemodel (CDM), human metal model (HMM), cable discharge events (CDE),to system level IEC 61000-4-2 tests ESD on-chip design and process manufacturing practices andsolutions to improve ESD semiconductor chip solutions, alsopractical off-chip ESD protection and system level solutions toprovide more robust systems System level concerns in servers, laptops, disk drives, cellphones, digital cameras, hand held devices, automobiles, and spaceapplications Examples of ESD design for state-of-the-art technologies,including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS(HVCMOS), RF CMOS, smart power, magnetic recording technology,micro-machines (MEMs) to nano-structures ESD Basics: From Semiconductor Manufacturing to ProductUse complements the author’s series of books on ESDprotection. For those new to the field, it is an essentialreference and a useful insight into the issues that confront moderntechnology as we enter the Nano-electronic Era.

Electrical Overstress Eos

Autore: Steven H. Voldman
Editore: John Wiley & Sons
ISBN: 1118511883
Grandezza: 51,91 MB
Formato: PDF, ePub
Vista: 9698
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"This book addresses EOS phenomena and distinguish it from other forms of phenomena such as electrostatic discharge (ESD), latchup, and EMC events"--

Esd Testing

Autore: Steven H. Voldman
Editore: John Wiley & Sons
ISBN: 0470511915
Grandezza: 21,76 MB
Formato: PDF, ePub, Docs
Vista: 4953
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With the evolution of semiconductor technology and global diversification of the semiconductor business, testing of semiconductor devices to systems for electrostatic discharge (ESD) and electrical overstress (EOS) has increased in importance. ESD Testing: From Components to Systems updates the reader in the new tests, test models, and techniques in the characterization of semiconductor components for ESD, EOS, and latchup. Key features: Provides understanding and knowledge of ESD models and specifications including human body model (HBM), machine model (MM), charged device model (CDM), charged board model (CBM), cable discharge events (CDE), human metal model (HMM), IEC 61000-4-2 and IEC 61000-4-5. Discusses new testing methodologies such as transmission line pulse (TLP), to very fast transmission line pulse (VF-TLP), and future methods of long pulse TLP, to ultra-fast TLP (UF-TLP). Describes both conventional testing and new testing techniques for both chip and system level evaluation. Addresses EOS testing, electromagnetic compatibility (EMC) scanning, to current reconstruction methods. Discusses latchup characterization and testing methodologies for evaluation of semiconductor technology to product testing. ESD Testing: From Components to Systems is part of the authors’ series of books on electrostatic discharge (ESD) protection; this book will be an invaluable reference for the professional semiconductor chip and system-level ESD and EOS test engineer. Semiconductor device and process development, circuit designers, quality, reliability and failure analysis engineers will also find it an essential reference. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, semiconductor testing and experimental work.

Ieee Circuits Devices

Autore:
Editore:
ISBN:
Grandezza: 53,23 MB
Formato: PDF, Docs
Vista: 2385
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Basic Esd And I O Design

Autore: Sanjay Dabral
Editore: Wiley-Interscience
ISBN:
Grandezza: 19,79 MB
Formato: PDF, Docs
Vista: 5474
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This volume presents an integrated treatment of ESD, I/O, and process parameter interactions that both I/O designers and process designers can use. It examines key factors in I/O and ESD design and testing, and helps the reader consider ESD and reliability issues up front when making I/O choices. Emphasizing clarity and simplicity, this book focuses on design principles that can be applied widely as this dynamic field continues to evolve.

On Chip Esd Protection For Integrated Circuits

Autore: Albert Z.H. Wang
Editore: Springer Science & Business Media
ISBN: 9780792376477
Grandezza: 12,40 MB
Formato: PDF, ePub, Mobi
Vista: 1744
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This comprehensive and insightful book discusses ESD protection circuit design problems from an IC designer's perspective. On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective provides both fundamental and advanced materials needed by a circuit designer for designing ESD protection circuits, including: Testing models and standards adopted by U.S. Department of Defense, EIA/JEDEC, ESD Association, Automotive Electronics Council, International Electrotechnical Commission, etc. ESD failure analysis, protection devices, and protection of sub-circuits Whole-chip ESD protection and ESD-to-circuit interactions Advanced low-parasitic compact ESD protection structures for RF and mixed-signal IC's Mixed-mode ESD simulation-design methodologies for design prediction ESD-to-circuit interactions, and more! Many real world ESD protection circuit design examples are provided. The book can be used as a reference book for working IC designers and as a textbook for students in the IC design field.

Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits

Autore:
Editore: Stanford University
ISBN:
Grandezza: 73,60 MB
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Vista: 6741
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It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.

Silicon Germanium

Autore: Raminderpal Singh
Editore: John Wiley & Sons
ISBN: 9780471660910
Grandezza: 25,55 MB
Formato: PDF
Vista: 6367
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"An excellent introduction to the SiGe BiCMOS technology, from theunderlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellenthigh-performance characteristics with very low noise, at high powergain, and with excellent linearity. This book is a comprehensivereview of the technology and of the design methods that go withit." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germaniumcovers all the key aspects of this technology and its applications.Beginning with a brief introduction to and historical perspectiveof IBM's SiGe technology, this comprehensive guide quickly moves onto: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling andcharacterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledgeand implementation methodologies * Illustrate design applications in a variety of IBM's SiGetechnologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip(SOC) design Written for RF/analog and mixed-signal designers, CAD designers,semiconductor students, and foundry process engineers worldwide,Silicon Germanium provides detailed insight into the modeling anddesign automation requirements for leading-edge RF/analog andmixed-signal products, and illustrates in-depth applications thatcan be implemented using IBM's advanced SiGe process technologiesand design kits. "This volume provides an excellent introduction to the SiGe BiCMOStechnology, from the underlying device physics to currentapplications. But just as important is the window the text providesinto the infrastructure-the process development, device modeling,and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, providesan in-depth look at the modeling and design automation requirementsfor making advanced applications using SiGe possible, andillustrates such applications as implemented using IBM's processtechnologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Nanoelectronics Nanowires Molecular Electronics And Nanodevices

Autore: Krzysztof Iniewski
Editore: McGraw Hill Professional
ISBN: 0071664491
Grandezza: 48,94 MB
Formato: PDF, Mobi
Vista: 6450
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The latest advances in nanoelectronics This definitive volume addresses the state of the art in nanoelectronics, covering nanowires, molecular electronics, and nanodevices. Written by global experts in the field, Nanoelectronics discusses cutting-edge techniques and emerging materials, such as carbon nanotubes and quantum dots. This pioneering work offers a comprehensive survey of nanofabrication options for use in next-generation technologies. Nanoelectronics covers: Electrical properties of metallic nanowires Electromigration defect nucleation in damascene copper interconnect lines Carbon nanotube interconnects in CMOS integrated circuits Printed organic electronics One-dimensional nanostructure-enabled chemical sensing Cross-section fabrication and analysis of nanoscale device structures and complex organic electronics Microfabrication and applications of nanoparticle-doped conductive polymers Single-electron conductivity in organic nanostructures for transistors and memories Synthesis of molecular bioelectronic nanostructures Nanostructured electrode materials for advanced Li-ion batteries Quantum-dot devices based on carbon nanotubes Carbon nanotubes as electromechanical actuators Low-level nanoscale electrical measurements and ESD Nanopackaging

Simulation Methods For Esd Protection Development

Autore: Harald Gossner
Editore: Elsevier
ISBN: 9780080526478
Grandezza: 18,56 MB
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Vista: 4088
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Simulation Methods for ESD Protection Development looks at the integration of new techniques into a comprehensive development flow, which is now available due advances made in the field during the recent years. These findings allow for an early, stable ESD concept at a very early stage of the technology development, which is essential now development cycles have been reduced. The book also offers ways of increasing the optimization and control of the technology concerning performance, thus making the process more cost effective and increasingly efficient. This title provides a guide through the latest research and technology presenting the ESD protection development methodology. This is based on a combination of process, device and circuit stimulation, and addresses the optimization of the industry critical issue, reduced development cycles.Written to address the needs of the ESD engineer, this text is required reading by all industry practitioners and researchers and students within this field. The FIRST Extensive overview on the subject of ESD simulation Addresses the industry critical issue of reduced development cycles, and provides solutions Presents the latest research in the field with high practical relevance and its results

Esd From A To Z

Autore: John M. Kolyer
Editore: Springer Science & Business Media
ISBN: 1461311772
Grandezza: 36,97 MB
Formato: PDF
Vista: 3921
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Existing sections in ESD Frim A to Z have been thoroughly revised and updated. New examples have been added to the troubleshooting chapter; and new versions of model specifications for ESD-safe handling and packaging can be found in the specifications chapter. The Appendix now includes ten recently published papers (making a total of 20) whose topics span the field of ESD control.

Jjap

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Editore:
ISBN:
Grandezza: 78,74 MB
Formato: PDF, ePub
Vista: 2999
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