Esd

Author: Steven H. Voldman
Editor: John Wiley & Sons
ISBN: 0470012900
Size: 11,90 MB
Format: PDF, Mobi
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This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Esd In Silicon Integrated Circuits

Author: E. A. Amerasekera
Editor: John Wiley & Sons
ISBN: 9780471954811
Size: 13,79 MB
Format: PDF, ePub, Mobi
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* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

Latchup

Author: Steven H. Voldman
Editor: John Wiley & Sons
ISBN: 9780470516164
Size: 13,49 MB
Format: PDF, Mobi
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Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Electrical Overstress Eos

Author: Steven H. Voldman
Editor: John Wiley & Sons
ISBN: 1118703332
Size: 11,51 MB
Format: PDF
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Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world. Look inside for extensive coverage on: Fundamentals of electrical overstress, from EOS physics, EOS time scales, safe operating area (SOA), to physical models for EOS phenomena EOS sources in today’s semiconductor manufacturing environment, and EOS program management, handling and EOS auditing processing to avoid EOS failures EOS failures in both semiconductor devices, circuits and system Discussion of how to distinguish between EOS events, and electrostatic discharge (ESD) events (e.g. such as human body model (HBM), charged device model (CDM), cable discharge events (CDM), charged board events (CBE), to system level IEC 61000-4-2 test events) EOS protection on-chip design practices and how they differ from ESD protection networks and solutions Discussion of EOS system level concerns in printed circuit boards (PCB), and manufacturing equipment Examples of EOS issues in state-of-the-art digital, analog and power technologies including CMOS, LDMOS, and BCD EOS design rule checking (DRC), LVS, and ERC electronic design automation (EDA) and how it is distinct from ESD EDA systems EOS testing and qualification techniques, and Practical off-chip ESD protection and system level solutions to provide more robust systems Electrical Overstress (EOS): Devices, Circuits and Systems is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the nano-electronic era.

System Level Esd Protection

Author: Vladislav Vashchenko
Editor: Springer Science & Business Media
ISBN: 3319032216
Size: 12,47 MB
Format: PDF, Docs
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This book addresses key aspects of analog integrated circuits and systems design related to system level electrostatic discharge (ESD) protection. It is an invaluable reference for anyone developing systems-on-chip (SoC) and systems-on-package (SoP), integrated with system-level ESD protection. The book focuses on both the design of semiconductor integrated circuit (IC) components with embedded, on-chip system level protection and IC-system co-design. The readers will be enabled to bring the system level ESD protection solutions to the level of integrated circuits, thereby reducing or completely eliminating the need for additional, discrete components on the printed circuit board (PCB) and meeting system-level ESD requirements. The authors take a systematic approach, based on IC-system ESD protection co-design. A detailed description of the available IC-level ESD testing methods is provided, together with a discussion of the correlation between IC-level and system-level ESD testing methods. The IC-level ESD protection design is demonstrated with representative case studies which are analyzed with various numerical simulations and ESD testing. The overall methodology for IC-system ESD co-design is presented as a step-by-step procedure that involves both ESD testing and numerical simulations.

Esd Design For Analog Circuits

Author: Vladislav A. Vashchenko
Editor: Springer Science & Business Media
ISBN: 9781441965653
Size: 12,80 MB
Format: PDF, Kindle
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This Book and Simulation Software Bundle Project Dear Reader, this book project brings to you a unique study tool for ESD protection solutions used in analog-integrated circuit (IC) design. Quick-start learning is combined with in-depth understanding for the whole spectrum of cro- disciplinary knowledge required to excel in the ESD ?eld. The chapters cover technical material from elementary semiconductor structure and device levels up to complex analog circuit design examples and case studies. The book project provides two different options for learning the material. The printed material can be studied as any regular technical textbook. At the same time, another option adds parallel exercise using the trial version of a complementary commercial simulation tool with prepared simulation examples. Combination of the textbook material with numerical simulation experience presents a unique opportunity to gain a level of expertise that is hard to achieve otherwise. The book is bundled with simpli?ed trial version of commercial mixed- TM mode simulation software from Angstrom Design Automation. The DECIMM (Device Circuit Mixed-Mode) simulator tool and complementary to the book s- ulation examples can be downloaded from www.analogesd.com. The simulation examples prepared by the authors support the speci?c examples discussed across the book chapters. A key idea behind this project is to provide an opportunity to not only study the book material but also gain a much deeper understanding of the subject by direct experience through practical simulation examples.

Esd Testing

Author: Steven H. Voldman
Editor: John Wiley & Sons
ISBN: 0470511915
Size: 16,74 MB
Format: PDF, Docs
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With the evolution of semiconductor technology and global diversification of the semiconductor business, testing of semiconductor devices to systems for electrostatic discharge (ESD) and electrical overstress (EOS) has increased in importance. ESD Testing: From Components to Systems updates the reader in the new tests, test models, and techniques in the characterization of semiconductor components for ESD, EOS, and latchup. Key features: Provides understanding and knowledge of ESD models and specifications including human body model (HBM), machine model (MM), charged device model (CDM), charged board model (CBM), cable discharge events (CDE), human metal model (HMM), IEC 61000-4-2 and IEC 61000-4-5. Discusses new testing methodologies such as transmission line pulse (TLP), to very fast transmission line pulse (VF-TLP), and future methods of long pulse TLP, to ultra-fast TLP (UF-TLP). Describes both conventional testing and new testing techniques for both chip and system level evaluation. Addresses EOS testing, electromagnetic compatibility (EMC) scanning, to current reconstruction methods. Discusses latchup characterization and testing methodologies for evaluation of semiconductor technology to product testing. ESD Testing: From Components to Systems is part of the authors’ series of books on electrostatic discharge (ESD) protection; this book will be an invaluable reference for the professional semiconductor chip and system-level ESD and EOS test engineer. Semiconductor device and process development, circuit designers, quality, reliability and failure analysis engineers will also find it an essential reference. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, semiconductor testing and experimental work.

Esd Protection Device And Circuit Design For Advanced Cmos Technologies

Author: Oleg Semenov
Editor: Springer Science & Business Media
ISBN: 9781402083013
Size: 13,63 MB
Format: PDF, ePub
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ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

Esd Design Challenges And Strategies In Deeply Scaled Integrated Circuits

Author:
Editor: Stanford University
ISBN:
Size: 12,90 MB
Format: PDF, Docs
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It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.

Basic Esd And I O Design

Author: Sanjay Dabral
Editor: Wiley-Interscience
ISBN:
Size: 13,78 MB
Format: PDF, ePub
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The first comprehensive guide to ESD protection and I/O design Basic ESD and I/O Design is the first book devoted to ESD (electrostatic discharge) protection and input/output design. Addressing the growing demand in industry for high-speed I/O designs, it bridges the gap between ESD research and current VLSI design practices and provides a much-needed reference for practicing engineers who are frequently called upon to learn the subject on the job. This volume presents an integrated treatment of ESD, I/O, and process parameter interactions that both I/O designers and process designers can use. It examines key factors in I/O and ESD design and testing, and helps the reader consider ESD and reliability issues up front when making I/O choices. Emphasizing clarity and simplicity, this book focuses on design principles that can be applied widely as this dynamic field continues to evolve. Basic ESD and I/O Design: * Describes strategies for design-oriented ESD protection * Explains layout methods that enhance ESD protection designs * Addresses basic I/O designs, including new problems such as mixed voltage interfaces * Discusses fabrication aspects affecting ESD and I/O protection * Illustrates concepts using numerous figures and examples * Expresses device physics in terms of simple electrical circuit models * Cross-references the material to standard texts in the field Essential for engineers in industry and anyone designing circuits, systems, or devices for future technologies, Basic ESD and I/O Design is also a useful reference for researchers and graduate students involved in core VLSI design or computer architecture.